Large-scale thallene film with emergent spin-polarized states mediated by tin intercalation for spintronics applications

<p>The quantum effects confined in the ultimate two-dimensional limit are able to address the challenges and provide advances in high-performance&nbsp;<a href="https://www.sciencedirect.com/topics/engineering/magnetoelectronics" rel="noopener noreferrer" target="_blank">spintronic</a>&nbsp;devices. In the paper we show a successful strategy to enrich the electronic properties of thallene, a new honeycomb analogue of graphene, through the interface engineering, which opens a great potential of thallene as an advanced spintronics material. While the thallene has been experimentally realized recently on NiSi2/Si(111) substrate, there remains a lack of attractive electronic properties due to the strong thallene-substrate coupling. This challenge is addressed here through the decoration of thallene/NiSi2&nbsp;interface by Sn interlayer, which allows to eliminate the thallene-substrate coupling and produce a high-quality large-scale thallene monolayer with exotic electron bands demonstrating colossal spin-polarization just above the&nbsp;<a href="https://www.sciencedirect.com/topics/engineering/fermi-level" rel="noopener noreferrer" target="_blank">Fermi level</a>. It is demonstrated that appropriate electron doping or&nbsp;<a href="https://www.sciencedirect.com/topics/engineering/external-electric-field" rel="noopener noreferrer" target="_blank">external electric field</a>&nbsp;are enable the spin-transport regime. The discovered band structure regulation boosts the functionality of the 2D-Tl Xene and makes it a highly attractive material for spintronics applications.</p>

Materials Today Advances

The quantum effects confined in the ultimate two-dimensional limit are able to address the challenges and provide advances in high-performance&nbsp;spintronic&nbsp;devices....

Large-scale thallene film with emergent spin-polarized states mediated by tin intercalation for spintronics applications

Authors

Leonid V. Bondarenko

Yuriy E. Vekovshinin

Alexey N. Mihalyuk

Tatyana V. Utas

Dimitry V. Gruznev

Jyh-Pin Chou

Sergey V. Eremeev

Andrey V. Zotov

Alexander A. Saranin

Alexey N. Mihalyuk

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